| PART |
Description |
Maker |
| FM21LD16-60-BG FM21LD16-60-BGTR |
2Mbit F-RAM Memory
|
Cypress Semiconductor
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| LH28F016SUHT LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
16Mbit(1Mbit x 16/ 2Mbit x 8) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| HMN2568D-85 HMN2568D-85I HMN2568D-120 HMN2568D-120 |
Non-Volatile SRAM MODULE 2Mbit (256K x 8-Bit), 32Pin-DIP, 5V
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| M28W231 |
2Mbit (256Kb x8, Boot Block) Low Voltage Flash Memory(2Mb低压闪速存储器)
|
意法半导
|
| LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory 16兆（容量Mbit × 16Mbit的8V单电压闪
|
Sharp, Corp.
|
| HMN12816D-85I HMN12816D HMN12816D-120 HMN12816D-12 |
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 非易失性SRAM模块即可移植28K的x 16位）0pin浸，5V
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co.,Ltd
ETC[ETC]
List of Unclassifed Manufacturers
|
| V54C365804VC |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| V54C365804VD |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| AM29LV200BB-90EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion, Inc.
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
